28 31 35 42 56 70 105 140 v 40 45 50 60 80 100 150 200 v to-251/ipak e: to-251/ipak, molded plastic m ounting position: any polarity: see diagram erminals: plated leads solderable per 0.85 0.92 = 5a v cas sk520p-sk5200p 1 of 2 c/w pf 0.55 v 580p characteristic symbol c l assification rating 94v-o plastic case material has ul flammability guard ring die construction for use in low voltage application low power loss, high efficiency ideally suited for automatic assembly 5.0 a schottky barrier diode feat ures m e chanical data ! ! t mil- st d-202, method 208 ! ! ! lead free: for rohs / lead free version m aximum r atings and electrical characteristics @t a =25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. ! schottk y barrier chip ! ! ! ! ! p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rm s reverse voltage v r( rm s) a v erage rectified output current @t l = 100 c (note 1) i o 5. 0 a non-repet itive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m a forward v oltage @i f fm p e ak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 0. 1 20 ma t ypical junction capacitance (note 2) c j t ypical thermal resistance (note 1) r ja operat ing and storage temperature range t j , t st g c not e: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. sk 540p sk 550p sk 560p 5100p 5150p units 0.70 350 280 200 15 z ibo seno electronic engineering co., ltd. www.senocn.com 5200p 150 sk 545p SK540P-sk5200p sk sk sk sk -55 t o +150 -55 t o +125
2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com SK540P-sk5200p SK540P-sk5200p r at ing and characteristic curves fig.1-typical for ward current derating curve a verage for ward current,(a) 1.0 2.0 3.0 4.0 5.0 6.0 case tempera ture,( c) 0 0 20 40 60 80 100 120 140 160 180 200 SK540P~sk545p fig.2-typical for ward characteristics 0.1 1.0 .01 10 50 instant aneous forward current,(a) for w ard voltage,(v) pulse width 300us 1% duty cycle .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 50~60v 80~100v 20~45v tj=25 c 150~200v fig.3-maximum non-repetitive for w ard surge current 60 30 0 90 150 120 number of cycles a t 60hz 11 0 5 50 100 tj=25 c 8.3ms single half sine w ave jedec method peak forw ard surge current,(a) fig.4 - typical reverse characteristics reverse leakage current , (ma) 0.001 0.01 0.1 1.0 100 10 0 percent of ra ted peak reverse voltage,(%) 20 40 60 80 100 20v~45v 50v~200v t2 5 c j = t 100 c j = sk550p ~s k5200 p
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